Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

Abstract Herein, the direct growth of polar orthorhombic phase in Hf 0.5 Zr O 2 (HZO) thin films is reported using Pulsed Laser Deposition (PLD). The HZO onto a preheated (700 °C) silicon substrate mimics rapid thermal annealing, which allows formation smaller crystallites (~9.7 nm) with large surface energy leading to stabilization metastable phase. Unlike atomic layer deposition (ALD) HZO, PLD more advantageous for depositing highly crystalline through optimized parameters, such as laser fluence and background gas pressure. Further, -HZO integrated HfO dielectric resulting gate stacks have been used bottom FET architecture-‘Si// -HZO/HfO /MoS //Ti/Au’. NCFETs yielded sub-thermionic subthreshold swing (SS = 33.03 ± 8.7 mV/dec. SS rev 36.4 7.7 mV/dec.) negligible hysteresis (~28 mV), capable realizing low power digital/analog circuits.